FREQUENCY-SELECTIVE SURFACE FROM OPTICALLY-EXCITED SEMICONDUCTOR ON ASUBSTRATE

Authors
VARDAXOGLOU JC LAU PY KEARNEY M
Citation
Jc. Vardaxoglou et al., FREQUENCY-SELECTIVE SURFACE FROM OPTICALLY-EXCITED SEMICONDUCTOR ON ASUBSTRATE, Electronics Letters, 34(6), 1998, pp. 570-571
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
6
Year of publication
1998
Pages
570 - 571
Database
ISI
SICI code
0013-5194(1998)34:6<570:FSFOSO>2.0.ZU;2-N
Abstract
A dipole frequency selective surface is electronically printed on to a semiconductor backed by an insulating substrate, by means of an optic al excitation. The surface impedance of the plasma-generated array is described in terms of the electron-hole concentration. Concentrations of at least 10(18)cm(-3) are required for a resonant state to be reach ed, whereas power is mainly dissipated at similar to 10(17)cm(-3). The effect of the insulator thickness is briefly discussed.