HIGH-SPEED INGAAS INALGAAS/INP WAVE-GUIDE-INTEGRATED MSM PHOTODETECTORS FOR 1.3-1.55-MU-M WAVELENGTH RANGE/

Waveguide-integrated metal-semiconductor-metal photodetectors based on MOCVD-grown InP/InGaAs/InAlGaAs/InP layers are reported. The evanesce nt field coupled detectors have an absorbing layer thickness of only 1 50 nm, and 0.7 mu m feature-size electrodes. An internal coupling effi ciency of greater than or equal to 90% has been achieved for detector lengths as short as 20 and 30 mu m at wavelengths of 1.3 and 1.5 mu m, respectively. A 3 dB bandwidth of 20 GHz at 1.55 mu m has been obtain ed.