ADVANTAGES OF AL-FREE GAINP INGAAS PHEMTS FOR POWER APPLICATIONS/

The performance and temperature stability of Al-free GaInAs/GaAs PHEMT s with GaInP as a Schottky barrier is reported. GaInP/GaInAs/GaAs PHEM Ts with a 1 mu m gate length show an f(max) value of 76 GHz with a max imum drain current of 570 mA/mm and a drain-source breakdown voltage o f 16 V. Moreover, the first results on short gate length devices (0.15 mu m) yield f(T) and f(max) values of 106 and 203 GHz, respectively. In this case, the drain-source breakdown voltage is as high as 8 V. Th ese results demonstrate the great potential of GaInP/GaInAs PHEMTs for power applications.