ALN GAN INSULATED GATE HETEROSTRUCTURE FET WITH REGROWN N(+)GAN OHMICCONTACT/
Citation
H. Kawai et al., ALN GAN INSULATED GATE HETEROSTRUCTURE FET WITH REGROWN N(+)GAN OHMICCONTACT/, Electronics Letters, 34(6), 1998, pp. 592-593
Categorie Soggetti
Engineering, Eletrical & Electronic
SICI code
0013-5194(1998)34:6<592:AGIGHF>2.0.ZU;2-4
Abstract
An AlN/GaN insulated gate heterostructure FET is presented. An n(+)GaN
channel is placed on a thick Al0.15Ga0.85N layer and is covered by a
4 nm thick AlN insulator layer. The FET has a threshold voltage of nea
r 0 V. A G(m) of 220 mS/mm for a 1.4 mu m gate length was obtained.
