AN IN-0.5(AL0.3GA0.7)(0.5)P IN0.2GA0.8AS POWER HEMT WITH 65.2-PERCENTPOWER-ADDED EFFICIENCY UNDER 1.2V OPERATION/

The authors report the first power performance of In-0.5(Al0.3Ga0.7)(0 .5)P/In0.2Ga0.8As double-heterojunction pseudomorphic high electron mo bility transistors (DH-PHEMTs) for portable wireless power application s. At 850 MHz, a 1 mu m x 5 mm device demonstrated a maximum power-add ed efficiency (PAE) of 65.2 and 68.2% under 1.2 and 2 V operation, res pectively. At 1.9 GHz, a 53% peak PAE, a 8.3 dB linear power gain, and a 75 dBm saturated output power were obtained from the same device at a drain bias of 2 V.