CHARACTERIZATION OF SCHOTTKY JUNCTIONS ON IN0.235GA0.765AS0.536P0.464LATTICE-MATCHED TO GAAS

InGaAsP Schottky junctions are formed with various metals such as Au, Cu and Ag. Schottky barrier heights as high as 0.98 eV are obtained, i rrespective of the Schottky metals used. From the contact potential di fference, estimated using Kelvin probe measurement, it is found that t he Fermi level is pinned at the surface of InGaAsP treated by wet-etch ing. The thermal stability of InGaAsP Schottky junctions is examined. An effective Schottky barrier height of >0.98 eV is maintained at an a nnealing temperature as high as 250 degrees C.