SINGLE 3.4V OPERATION POWER HETEROJUNCTION FET WITH 60-PERCENT EFFICIENCY FOR PERSONAL DIGITAL CELLULAR PHONES

The authors describe the 950 MHz power performance of a double-doped A lGaAs/InGaAs/AlGaAs heterojunction FET (HJFET), operated at a single 3 .4V bias voltage. The developed 1.01 mu m gate-length HJFET exhibited an on-resistance of 2.3 Ohm.mm and a threshold voltage of -0.25 V. Whi le operating with a single 3.4 V bias supply, a 16 mm gate-width HJFET exhibited an output power of 1.42 W (31.5 dBm) and 60.1% power-added efficiency with an adjacent channel leakage power of -48.2 dBc at an o ff-centre frequency of 50 kHz. The developed HJFET is promising for si ngle-bias voltage operation power modules of personal digital cellular phones with a single Li-ion battery supply.