CONCENTRATION PROFILES IN LASER-DEPOSITED NI C AND W/C MULTILAYERS/

Citation
V. Kharlamov et al., CONCENTRATION PROFILES IN LASER-DEPOSITED NI C AND W/C MULTILAYERS/, Physica status solidi. a, Applied research, 166(1), 1998, pp. 91-106
Citations number
35
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
166
Issue
1
Year of publication
1998
Pages
91 - 106
Database
ISI
SICI code
0031-8965(1998)166:1<91:CPILNC>2.0.ZU;2-N
Abstract
Experimental studies of concentration profiles in W/C and Ni/C multila yers prepared by pulsed laser deposition are compared with ballistic s imulations of the deposition process by means of the computer code TRI DYN. One part of the deposited particles possesses kinetic energies of about 100 eV and leads to a ballistic mixing of the deposited layers. As a consequence, diffuse interface concentration profiles arise and the concentrations within the individual layers depend on the layer th ickness. The concentration profiles can be highly asymmetric between a djacent interfaces as observed e.g. in W/C multilayers. Simulations pr edict that the interface width for the deposition of W onto C is up to 3.5, times larger than in the opposite case. Differences between simu lation results and HREM, AES, X-ray and XPS studies suggest that the r esulting interface concentration profiles are essentially influenced b y compound formation as well as by demixing of components occurring du ring deposition.