INTEGRATION OF 5-V CMOS AND HIGH-VOLTAGE DEVICES FOR DISPLAY DRIVER APPLICATIONS

Reduced surface field lateral double-diffused MOS transistors for the driving circuits of plasma display panel and field emission display in the 120 V region have been integrated for the first time into a low-v oltage 1.2 mu m analog CMOS process using p-type bulk silicon. This me thod of integration provides an excellent way of achieving both high p ower and low voltage functions on the same chip; it reduces the number of mask layers and also the cost of fabrication. The lateral double-d iffused MOS transistor with a drift length of 6.0 mu m and a breakdown voltage greater than 150 V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffuse d MOS is 4.8 m Omega.cm(2) at a gate voltage of 5 V.