SILICON SURFACE-STATES AND SUBSURFACE HYDROGEN

The n-Si\fluoride electrolyte interface exhibits a small interface-sta te density, as shown by the presence of a weak capacitance peak in the capacitance-potential curves. After in situ chemical dissolution of a n anodically formed oxide, a quasi ideal interface with a very low int erface-state density was obtained. At open-circuit potential, a slow i ncrease in the interface-state density was observed. These interface s tates result from the penetration of hydrogen into the silicon subsurf ace region. The inward diffusion of hydrogen produced by electrochemic al etching of silicon accounts for the large time constant observed. ( C) 1998 Elsevier Science S.A. All rights reserved.