GROWTH-CHARACTERISTICS AND PHYSICAL-PROPERTIES OF PBTE BAF2 PREPARED UNDER NONEQUILIBRIUM CONDITIONS/

PbTe/BaF2 films were grown under nonequilibrium conditions by laser-mo dulated epitaxy. The structural properties of the layers were investig ated by x-ray crystallographic methods and scanning tunneling microsco py. It was established that the films obtained under nonequilibrium co nditions on (III)BaF2 substrates are granular (d less than or equal to 250 Angstrom) with (001) orientation. The electrophysical and photoel ectric properties of the films depend on the technological conditions of growth and are determined by states at intergrain boundaries. (C) 1 998 American Institute of Physics.