ON THE EFFECT OF A DOPANT ON THE FORMATION OF DISORDERED REGIONS IN GAAS UNDER IRRADIATION WITH FAST-NEUTRONS

Authors
KLADKO VP PLYATSKO SV
Citation
Vp. Kladko et Sv. Plyatsko, ON THE EFFECT OF A DOPANT ON THE FORMATION OF DISORDERED REGIONS IN GAAS UNDER IRRADIATION WITH FAST-NEUTRONS, Semiconductors, 32(3), 1998, pp. 235-237
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
32
Issue
3
Year of publication
1998
Pages
235 - 237
Database
ISI
SICI code
1063-7826(1998)32:3<235:OTEOAD>2.0.ZU;2-4
Abstract
The effect of the irradiation dose and the density and type of dopant on the size of disordered regions in GaAs was studied by x-ray methods . The role of the impurity in the formation of disordered regions and their evolution with dose was analyzed. (C) 1998 American Institute of Physics.