ON THE MECHANISMS OF LONG-TERM RELAXATION OF THE CONDUCTIVITY IN COMPENSATED SI(B,S) AND SI(B,RH) AS A RESULT OF IRRADIATION

Authors
YUNUSOV MS KARIMOV M OKSENGENDLER BL
Citation
Ms. Yunusov et al., ON THE MECHANISMS OF LONG-TERM RELAXATION OF THE CONDUCTIVITY IN COMPENSATED SI(B,S) AND SI(B,RH) AS A RESULT OF IRRADIATION, Semiconductors, 32(3), 1998, pp. 238-240
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
32
Issue
3
Year of publication
1998
Pages
238 - 240
Database
ISI
SICI code
1063-7826(1998)32:3<238:OTMOLR>2.0.ZU;2-E
Abstract
Experimental data on the long-term relaxation of the photocurrent in c ompensated samples of Si[B,S] and Si[B,Rh] are analyzed on the basis o f three mechanisms (sticking levels, recombination processes via level s with large relaxation, and separation of carriers in the spatial inh omogeneity field). It is shown that in a number of cases irradiation ( by Co-60 gamma-rays at different temperatures) makes it possible to de termine the dominant mechanisms. (C) 1998 American Institute of Physic s.