LASER-MODULATED EPITAXY OF LEAD-TELLURIDE

The dependences of the density and mobility of free current carriers i n PbTe/KCl(KBr) layers, grown by epitaxy modulated by infrared laser r adiation, on the power density W of the laser radiation at the target and the substrate temperature T-s were investigated. It is shown that the free-carrier density in the regions of both electronic and hole co nductivity (10(16)<N, P<10(19)cm(-3)) with mobility at 77 K correspond ing to the most perfect crystals can be controlled over wide limits by varying W and T-s. (C) 1998 American Institute of Physics.