PROPERTIES OF PERIODIC ALPHA-SI-H A-SINX-H STRUCTURES OBTAINED BY NITRIDIZATION OF AMORPHOUS-SILICON LAYERS/

The kinetics of nitridization of a-Si:H layers, the properties of the structures that are formed and a-Si:H in them have been investigated. The changes occurring in the resistance of the a-Si:H layers in the co urse of nitridization are described in terms of the competition betwee n doping, transport, and change in the thickness of the remaining a-Si :H layer. The experimental data on the band spectrum of superlattices with a-Si:H and a-Si-x:H layer thicknesses similar to 35 Angstrom and similar to 5 Angstrom, respectively, are in agreement with calculation s in a model of interacting quantum wells with m = (0.36 +/- 0.1)m(0) . Comparison of the properties of superlattices obtained by deposition of successive layers and nitridization of the a-Si:H layers showed th at the latter can have a higher ''structural perfection.'' (C) 1998 Am erican Institute of Physics.