PHOTOSENSITIVITY OF POROUS SILICON-LAYERED III-VI SEMICONDUCTORS HETEROSTRUCTURES

Rectifying heterojunctions with photosensitivity 1-5 V/W at T = 300 K were obtained by forming optical contacts between free porous silicon and layered InSe and GaSe semiconductors. A wide-band photovoltaic eff ect was obtained when these heterostructures were illuminated on the f ree porous silicon plate side. The long-wavelength photosensitivity ed ge of these devices is determined by direct transitions in InSe or GaS e, respectively. It is concluded that heterojunctions based on free po rous silicon plates can be used as wide-band phototransducers. (C) 199 8 American Institute of Physics.