SPIN-ORBIT-SPLITTING AND WEAK ANTILOCALIZATION IN AN ASYMMETRIC IN0.53GA0.47AS INP QUANTUM-WELL/

Low-magnetic-field; magnetoresistance of a two-dimensional electron ga s (2DEG) in a triangular quantum well at a single In0.53Ga0.47As-lnP h eterointerface has been studied. It was shown that the spin-orbit rela xation plays a significant role in the low-field magnetoresistivity in a wide range of 2DEG densities (1.8-5.5) x 10(11) cm(-2). Analysis sh ows that both cubic and linear terms in the wavevector must be taken i nto account in spin splitting to describe experimental results. The li near term is mainly related to the asymmetry of the quantum well (Rash ba term). Analysis of the density dependence of the spin-orbit interac tion rate permits separation of the spin splittings related to the lac k of inversion of the crystal and to the asymmetry of quantum well and determination of the spin splitting parameters for 2D electrons in as ymmetric ln(0.53)Ga(0.47)AS quantum wells.