ELECTRICAL CHARACTERIZATION OF DEEP LEVELS EXISTING IN MG-SI-IMPLANTED AND MG-P-SI-IMPLANTED P(+)N INP JUNCTIONS

The deep levels existing in fully ion implanted and rapidly thermally annealed p(+)n inP junctions were investigated in this work. The sampl es were co-implanted with magnesium and silicon. An additional phospho rus implantation was carried out in some samples to study its effect. in order to characterize the traps, deep level transient spectroscopy (DLTS) and the capacitance-voltage transient technique (CVTT) were use d. For a (control) sample implanted with Mg only, four deep electron l evels located at the upper halt of the band gap (at 0.45, 0.2 eV 0.25 and 0.27 eV below the conduction band) were detected by DLTS. On the c ontrary, for the Mg-Si-and Mg-P-Si-implanted samples only two of them (at 0.25 and 0.27 eV below the conduction band) were observed. Several characteristics of each trap were derived by CVTT measurements. Tenta tive assignments have been proposed for the physical nature of these d eep levels.