CHARACTERIZATION OF BATIO3 THIN-FILMS DEPOSITED BY RF MAGNETRON SPUTTERING FOR USE IN A.C. TFEL DEVICES

Thin films of BaTiO3 have been deposited by RF magnetron sputtering on to 100 mm diameter n-type single-crystal Si wafers. Full deposition an d post-deposition variables have been investigated with respect to the ir effect on the dielectric constant and refractive index of the thin films. Specifically for use as insulators for thin film electrolumines cent (TFEL) devices, the films need to exhibit a high dielectric const ant and a low refractive index. The optimum fabrication route was dete rmined to be deposition at 200 degrees C in a 30% O-2 in Ar atmosphere at 7 mTorr with a post-deposition anneal at 700 degrees C for 1 h. De monstrated here is that films exhibiting suitable characteristics, nam ely, epsilon(r) = 26 and n = 2.1, for use in TFEL devices can be fabri cated using RF magnetron sputter deposition.