H. Ishida et al., IN-SITU SFG SPECTROSCOPY OF FILM GROWTH - II - DEPOSITION OF FORMIC-ACID ON NI(110) SURFACE, The Journal of chemical physics, 108(14), 1998, pp. 5957-5964
Infrared-visible sum-frequency generation (SFG) spectroscopy was used
to monitor in situ the growth of multiple layers of formic acid on a N
i(110) surface. The signal by the CH stretching band displayed a chara
cteristic interference pattern as the deposition proceeded and the fea
ture was analyzed by the formula presented in the preceding article. T
he effect of substrate structure was examined to reveal that the depos
ition of a SFG active layer on alien surfaces requires the substrate t
emperature higher than 138 K with the optimum at 158 K, but the same g
rowth as under the optimum condition was sustained at 143 K once the a
ctive layer had been formed beforehand. No SFG-wise change was observe
d when the sample temperature was changed in vacuum either from the SF
G undetectable 143-153 K or to the opposite direction to indicate that
the layers formed at the two temperatures are not related with phase
transition. However, the deposition of the SFG-active layer took place
at 143 K, when the sample was precovered by the active layer or the S
FG-inactive layer was heated to 153 K. Covering by a DCOOD layer, whic
h has no SFG signal at the examined frequency, gave a significant supp
ression of the interference feature. An interpretation is given on the
crystal structure and molecular orientation of the SFG-active and SFG
-inactive layers. (C) 1998 American Institute of Physics.