Using a novel energy loss spectroscopy detector, we investigate the co
ntributions of elastically and plasmon inelastically scattered electro
ns to the oscillating reflection high energy electron diffraction (RHE
ED) pattern during molecular beam epitaxy of GaAs and AlAs. While main
taining the spatial and temporal resolution of a typical RHEED system,
we obtain an energy resolution that is better than 2 eV. The ratio of
elastic and plasmon inelastic contributions is found to depend on sur
face morphology. Exclusion of inelastic scattering does not affect the
phase of RHEED intensity oscillations. (C) 1998 Elsevier Science B.V.