We argue that there is a new liquid phase in the two-dimensional elect
ron system in Si MOSFETs at low enough electron densities. The recentl
y observed metal-insulator transition results as a crossover from the
percolation transition of the liquid phase through the disorder landsc
ape in the system below the liquid-gas critical temperature. The conse
quences of our theory are discussed for variety of physical properties
relevant to the recent experiments.