COULOMB CHARGING EFFECT IN SELF-ASSEMBLED GE QUANTUM DOTS STUDIED BY ADMITTANCE SPECTROSCOPY

Authors
ZHANG SK ZHU HJ LU F JIANG ZM WANG X
Citation
Sk. Zhang et al., COULOMB CHARGING EFFECT IN SELF-ASSEMBLED GE QUANTUM DOTS STUDIED BY ADMITTANCE SPECTROSCOPY, Physical review letters, 80(15), 1998, pp. 3340-3343
Citations number
12
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
80
Issue
15
Year of publication
1998
Pages
3340 - 3343
Database
ISI
SICI code
0031-9007(1998)80:15<3340:CCEISG>2.0.ZU;2-2
Abstract
Quantum confined energy levels and the Coulomb charging effect of hole s in self-assembled Ge dots embedded in Si barriers are studied using admittance spectroscopy at temperatures above 100 K. Ground state and first excited state occupancies of five to seven holes are identified by varying the Fermi-level position under different applied bias volta ges in the admittance measurements. Hole-capture cross sections of the quantum levels are found to be extremely large and energy dependent.