T. Sohnel et al., FE4SI2SN7O16 - A COMBINATION OF FESN6-OCT AHEDRA WITH LAYERS OF (FE3SN)O-6-OCTAHEDRA - PREPARATION, PROPERTIES, AND CRYSTAL-STRUCTURE, Zeitschrift fur anorganische und allgemeine Chemie, 624(4), 1998, pp. 708-714
Citations number
28
Categorie Soggetti
Chemistry Inorganic & Nuclear
Journal title
Zeitschrift fur anorganische und allgemeine Chemie
Fe4Si2Sn7O16 has been prepared by a solid state reaction at 900 degree
s C from a mixture of Fe2O3, SnO2, Sn, and Si. The compound is a param
agnetic semiconductor. Results of Mossbauer and suszeptibility measure
ments as well as bond length-bond strength calculations lead to the po
ssible ionic formulation Fe42+Si24+Sn12+Sn14+O162-. The compound cryst
allizes in the trigonal space group P (3) over bar m1 (no. 164), with
one formula unit per cell. Lattice parameters obtained by powder measu
rements are: a = 6.8243(6)Angstrom, c = 9.1404(6) Angstrom, gamma = 12
0 degrees, V = 368.6(1) Angstrom(3). The structure consists of layers
of edge linked oxygen octehedra exactly centered by Sn and Fe in the r
atio 1:3. Three plains of isolated SiO4 tetrahedra, FeSn6 octahedra an
d again SiO4 terahedra are inserted between two such layers. The layer
s are stacked along [001] and linked three-dimensionally by oxygen.