FINE-STRUCTURE IN THE ELECTRON-EMISSION PROCESS FOR 2 DX-LIKE CENTERSIN SN-DOPED ALGAAS

Authors
ZHAN HH KANG JY HUANG QS
Citation
Hh. Zhan et al., FINE-STRUCTURE IN THE ELECTRON-EMISSION PROCESS FOR 2 DX-LIKE CENTERSIN SN-DOPED ALGAAS, Chinese Physics Letters, 15(1), 1998, pp. 60-61
Citations number
9
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
15
Issue
1
Year of publication
1998
Pages
60 - 61
Database
ISI
SICI code
0256-307X(1998)15:1<60:FITEPF>2.0.ZU;2-7
Abstract
Fine structure in the electron emission process for DX(Sn) centers in AlGaAs has been studied with high resolution Laplace defect spectrosco py. The influence of the different local configuration of Al and Ga, a toms around the centers on the electron thermal emissions was observed . An experimental evidence for the microscopic structure of two DX-lik e centers in Sn-doped AlGaAs is provided.