SURFACE-MORPHOLOGY AND SURFACE P-CHANNEL FIELD-EFFECT TRANSISTOR ON THE HETEROEPITAXIAL DIAMOND DEPOSITED ON INCLINED BETA-SIC(001) SURFACES

The effect of an inclined substrate on heteroepitaxial diamond has bee n investigated on 4 degrees off beta-SiC(001) tilted around the [<(1)o ver bar10>] axis. Homogeneous macro steps with (001) terraces are obse rved in the [<(1)over bar10>] direction forming, a vicinal angle of 3 degrees-4 degrees from the (001) surface reflecting the substrate incl ination. The selective growth is effective even if the dominant orient ation is inclined by several degrees from the surface normal, The tilt deviation is less than 1 degrees in the heteroepitaxial film. p-chann el field effect transistors have been fabricated on these heteroepitax ial films. The device performance is as good as that on homoepitaxial films. (C) 1998 American Institute of Physics.