PARTIAL AND TOTAL ALPHA-PARAMETERS IN SEMICONDUCTOR OPTICAL-DEVICES

alpha parameters due to partial variation of carrier density (alpha(N) ) or temperature (alpha(T)) are calculated for a two-dimensional semic onductor. We also introduce and investigate the total alpha parameter (alpha(t)) due to simultaneous variations of the carrier density and t emperature. We find that, unlike the usual alpha(N), the partial alpha (T) and total alpha(t) show quite different behavior with changes in u nderlying variables and could be positive, negative, or singular. (C) 1998 American Institute of Physics.