SINGLE-ELECTRON CHARGING EFFECTS IN NB NB OXIDE-BASED SINGLE-ELECTRONTRANSISTORS AT ROOM-TEMPERATURE/

Authors
SHIRAKASHI J MATSUMOTO K MIURA N KONAGAI M
Citation
J. Shirakashi et al., SINGLE-ELECTRON CHARGING EFFECTS IN NB NB OXIDE-BASED SINGLE-ELECTRONTRANSISTORS AT ROOM-TEMPERATURE/, Applied physics letters, 72(15), 1998, pp. 1893-1895
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
15
Year of publication
1998
Pages
1893 - 1895
Database
ISI
SICI code
0003-6951(1998)72:15<1893:SCEINN>2.0.ZU;2-G
Abstract
We have reported the single-electron charging effects in Nb/Nb oxide-b ased single-electron transistors (SETs) at room temperature (T=298 K). The SETs were first fabricated by a scanning probe microscope based a nodic oxidation. Then, the miniaturization of tunnel junctions was per formed by thermal oxidation. Ultra-low-capacitance tunnel junctions we re easily obtained by utilizing both kinds of oxidation processes, whi ch realizes room-temperature Nb-based SETs. (C) 1998 American Institut e of Physics.