THE ELECTRICAL-RESISTIVITY IN AL-W AMORPHOUS-ALLOYS

The amorphous Al100-xWx (x = 20, 22, 28 and 33) thin films have been p repared by co-deposition magnetron sputtering. The electrical resistiv ity of these alloys has been measured from room temperature down to li quid nitrogen temperature and for one Al78W22 Sample down to 1.5 K. Th e resistivity of two Al78W22 samples has been measured up to 1000 K. T he temperature dependence of the resistivity of the amorphous Al-W all oys in the temperature range from 77 K (20 K for x = 22) to 293 K can be well interpreted in terms of the weak localisation of the electrons . The measurement on the Al78W22 alloy down to 1.5 K yields that it is superconducting below 1.8 K. At temperatures higher than room tempera ture the resistivity of measured Al78W22 samples strongly and irrevers ibly depends on the heat treatment. After annealing the samples slight ly below their crystallisation temperature (550 degrees C) the depende nce of the resistivity on temperature becomes reversible and follows t he low temperature behaviour. The low and high temperature behaviour o bserved in Al78W22 alloy probably holds qualitatively for the other am orphous Al-W alloys. (C) 1998 Elsevier Science Ltd. All rights reserve d.