INVESTIGATION OF THE HOLOGRAPHIC STORAGE CAPACITY OF PARAELECTRIC K1-XLIXTA1-YNBYO3-CU,V

Authors
PESACH B REFAELI E AGRANAT AJ
Citation
B. Pesach et al., INVESTIGATION OF THE HOLOGRAPHIC STORAGE CAPACITY OF PARAELECTRIC K1-XLIXTA1-YNBYO3-CU,V, Optics letters, 23(8), 1998, pp. 642-644
Citations number
7
Categorie Soggetti
Optics
Journal title
Optics letters → ACNP
ISSN journal
01469592
Volume
23
Issue
8
Year of publication
1998
Pages
642 - 644
Database
ISI
SICI code
0146-9592(1998)23:8<642:IOTHSC>2.0.ZU;2-H
Abstract
High holographic storage capacity of paraelectric K1-xLixTa1-yNbyO3:Cu , V using the voltage-controlled photorefractive effect is experimenta lly demonstrated. Measurements of the M/# for various writing angles a nd reading fields are presented. In particular, it is shown that 128 a ngularly multiplexed holograms, written by two plane-wave beams separa ted by an angle of 8 degrees, yield an M/# of 20. (C) 1998 Optical Soc iety of America.