PECULIARITIES OF ELECTRONIC-PROPERTIES OF DELTA(SB) LAYERS IN EPITAXIAL SILICON - IV - HOPPING CONDUCTIVITY AND NONLINEAR EFFECTS

The temperature dependence of the kinetic electronic characteristics ( conductivity, magnetoresistance, Hall e.m.f.) is studied in the temper ature interval 3-50 K on epitaxial silicon crystals having a delta[Sb] layer with sheet concentrations of Sb atoms 1 X 10(13) and 5 x 10(12) cm(-2). The shape of the current-voltage characteristics is determine d at various temperatures. It is found that the low-temperature kineti c phenomena in these objects are governed by the hopping mechanism of conductivity. A variable range hopping conductivity is observed at suf ficiently low temperatures (< 10 K). The nonlinearity of the current-v oltage characteristics is explained by the theory of non-Ohmic hopping conductivity in moderately strong electric fields. (C) 1998 American Institute of Physics. [S1063-777X(98)00603-3].