CONTROL OF YBCO SHEET RESISTANCE WITH NI IMPLANTATION

Citation
Sh. Hong et al., CONTROL OF YBCO SHEET RESISTANCE WITH NI IMPLANTATION, Superconductor science and technology, 11(4), 1998, pp. 375-377
Citations number
14
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter
ISSN journal
09532048
Volume
11
Issue
4
Year of publication
1998
Pages
375 - 377
Database
ISI
SICI code
0953-2048(1998)11:4<375:COYSRW>2.0.ZU;2-J
Abstract
It was found that the resistance of YBa2Cu3O7-x (YBCO) films could be well controlled by Ni ion implantation. Both resistance and susceptibi lity measurements showed that the critical temperature (T-c) of a film was systematically suppressed from its original value to an insulting state with increasing implantation dose. The sheet resistance varies from 6 Omega/square to >20 Omega/square at 77 K with dose ranging from 1 x 10(13) to 2 x 10(16) cm(-2). For doses above 1 x 10(16) cm(-2), w e observed an ion gettering effect after subsequent annealing in which the implanted ions diffuse against the concentration gradient and get ter towards the peak concentration region.