It was found that the resistance of YBa2Cu3O7-x (YBCO) films could be
well controlled by Ni ion implantation. Both resistance and susceptibi
lity measurements showed that the critical temperature (T-c) of a film
was systematically suppressed from its original value to an insulting
state with increasing implantation dose. The sheet resistance varies
from 6 Omega/square to >20 Omega/square at 77 K with dose ranging from
1 x 10(13) to 2 x 10(16) cm(-2). For doses above 1 x 10(16) cm(-2), w
e observed an ion gettering effect after subsequent annealing in which
the implanted ions diffuse against the concentration gradient and get
ter towards the peak concentration region.