CONDENSED-PHASE EQUILIBRIA IN THE MO-GA-N SYSTEM AT 800 DEGREES-C

Authors
VENUGOPALAN HS MOHNEY SE
Citation
Hs. Venugopalan et Se. Mohney, CONDENSED-PHASE EQUILIBRIA IN THE MO-GA-N SYSTEM AT 800 DEGREES-C, Zeitschrift fur Metallkunde, 89(3), 1998, pp. 184-186
Citations number
21
Categorie Soggetti
Metallurgy & Metallurigical Engineering
Journal title
Zeitschrift fur Metallkunde → ACNP
ISSN journal
00443093
Volume
89
Issue
3
Year of publication
1998
Pages
184 - 186
Database
ISI
SICI code
0044-3093(1998)89:3<184:CEITMS>2.0.ZU;2-Q
Abstract
Phase equilibria were studied in the Mo-Ga-N system at 800 degrees C i n order to better understand the metallurgy of Mo contacts to the wide band gap semiconductor GaN. Liquid Ga metal and the solid phases Mo8G a41, Mo3Ga, and beta-Mo2N were experimentally observed to be in thermo dynamic equilibrium with GaN. Equilibrium between gamma-Mo2N and GaN c an also be inferred. No ternary phases were found in any of the sample s examined in this study.