PECULIARITIES OF THE QUANTUM MAGNETORESISTANCE EFFECTS IN A HEAVILY-DOPED SEMICONDUCTOR AT THE MICROWAVE-FREQUENCIES

Quantum magnetoresistance effects (negative magnetoresistance and Shub nikov-de Haas effect) have been studied for the first time at the micr owave frequencies in a heavily doped semiconductor using the electron paramagnetic resonance technique which improves the accuracy and sensi tivity of measurements as compared with the de mode. Whereas the Shubn ikov-de Haas effect exhibits conventional behavior, the negative magne toresistance was found to show two peculiarities: disappearance of the effect in very weak fields H less than or equal to 1 Oe at low temper ature and anomalous two-dimensional conducting skin-layer. (C) 1998 Pu blished by Elsevier Science Ltd.