ELECTRIC FORCE MICROSCOPY AS A PROBE OF ACTIVE AND PASSIVE ELEMENTS OF INTEGRATED-CIRCUITS

Citation
I. Karpov et al., ELECTRIC FORCE MICROSCOPY AS A PROBE OF ACTIVE AND PASSIVE ELEMENTS OF INTEGRATED-CIRCUITS, Applied surface science, 125(3-4), 1998, pp. 332-338
Citations number
12
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
125
Issue
3-4
Year of publication
1998
Pages
332 - 338
Database
ISI
SICI code
0169-4332(1998)125:3-4<332:EFMAAP>2.0.ZU;2-3
Abstract
Integrated circuit (IC) device structures and metal interconnects have been investigated with atomic force microscopy (AFM). Tapping mode AF M was used to acquire topographical data. The focus of this paper is o n the electrostatic interaction between a metallized AFM tip and the s ample surface in noncontact mode. By varying the tip potential to mini mize the electrostatic force between the tip and the surface, we were able to quantitatively probe voltages in metal interconnects and plana r resistors, as well as image pn junctions and trapped charges. (C) 19 98 Elsevier Science BV.