Ct. Kuo et al., FIELD-EFFECT TRANSISTOR WITH THE WATER-SOLUBLE SELF-ACID-DOPED POLYANILINE THIN-FILMS AS SEMICONDUCTOR, Synthetic metals, 93(3), 1998, pp. 155-160
UV-Vis spectroscopy and conductivity of the water-soluble self-acid-do
ped conducting polyanilines, poly(aniline-co-N-propanesulfonic acid an
iline) (PAPSAH) and sulfonic acid ring substituted polyaniline (SPAN),
in comparison with those of HCl-doped polyaniline, show that the decr
eases in polaron delocalization and structural order result from the s
teric hindrance imparted by the sulfonic acid substituent. The field-e
ffect transistors (FETs) are fabricated with the water-soluble self-ac
id-doped conducting polyanilines: PAPSAH and SPAN films, respectively,
as the semiconducting layer. These FETs have ideal source current-dra
in source voltage characteristics and their field-effect mobilities ca
n reach 2.14 (PAPSAH) and 0.33 cm(2) V-1 s(-1) (SPAN), which are close
to those of the amorphous silicon inorganic transistors (0.1-1.0 cm(2
) V-1 s(-1)) used extensively at present. These FETs are found to be e
nvironmentally more stable than those of other polyaniline FETs. (C) 1
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