FURTHER ASPECTS OF DAMAGE-INDUCED JUNCTION MECHANISMS AND THE ROLE OFPHOSPHORUS MOVEMENT IN DOUBLE-LAYER IN-CHAMBER ANNEALED IN-SN ITO/INPSOLAR-CELLS/

The research effort dedicated to sputtered indium tin oxide/indium pho sphide solar cells has yet to produce a definitive model of the juncti on that takes account of all of the experimental evidence. The work he re reports on a two-layer structure which was originally developed to avoid the surface degradation of bare InP that occurs under high-tempe rature processing conditions, but was found also to assist in the eluc idation of some of the mechanisms, particularly the role of hydrogen a nd phosphorus movement, involved in ITO/InP cell performance. This two -layer technique effected marked improvements in output properties, wh ich have previously been reported, and now we outline proposed operati ng mechanisms based on these results and on the work of other research ers in the area.