CHARGE-TRANSFER AND REDISTRIBUTION IN THE FORMATION OF THE K GAP(110)INTERFACE - A PHOTOELECTRON-SPECTROSCOPY STUDY/

Citation
S. Daddato et al., CHARGE-TRANSFER AND REDISTRIBUTION IN THE FORMATION OF THE K GAP(110)INTERFACE - A PHOTOELECTRON-SPECTROSCOPY STUDY/, Journal of physics. Condensed matter, 10(13), 1998, pp. 2861-2871
Citations number
28
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
10
Issue
13
Year of publication
1998
Pages
2861 - 2871
Database
ISI
SICI code
0953-8984(1998)10:13<2861:CARITF>2.0.ZU;2-R
Abstract
We present the results of a photoelectron spectroscopy study of the K/ GaP(110) interface grown at T = 120 K. We have investigated the system looking at the Ga 3d and P 2p core level spectra by analysing their l ineshape. This analysis shows that the transferred charge in the adato m-substrate bonding formation affects the electronic and chemical envi ronment of both surface Ga and P atoms. The results suggest relevant d ifferences with the intuitive picture of strong ionic localized bondin g between the alkali atom and surface Ga. They are instead more consis tent with a delocalized redistributed valence charge between the adsor bate and the substrate. We also conclude that the system at Theta = 1 ML is metallic, with an increasing disorder and inhomogeneity at the h ighest coverage studied. The similarities and differences with the Na/ GaP(110) and the other alkali metal/GaAs(110) systems are discussed.