FORMATION OF DEEP P-N-JUNCTIONS IN P-TYPE CZOCHRALSKI-GROWN SILICON BY HYDROGEN PLASMA TREATMENT

A depth-resolved experimental analysis (a spreading resistance probe a nd capacitance-voltage measurements) of a hydrogen plasma-enhanced the rmal donor (TD) formation at 400 degrees C in p-type Czochralski (Cz) silicon is presented. In this material for the first time, a fast TD i ntroduction with high initial generation rates and the formation of de er p-n junctions was found. Both the depth of the p-n junctions in Cz silicon and the electron concentration originating from TDs are depend ent on the dose of hydrogen ions induced from the plasma. A kinetic mo del for hydrogen-enhanced TD formation is presented, the results from which agree rather well with the experimental data. Our study gives a method for a simple low-temperature p-n junction formation by a one-st ep hydrogen plasma treatment, which is promising as an inexpensive tec hnology for p-n junction formation in Cz silicon.