CRYSTAL-GROWTH AND SEMICONDUCTING PROPERTIES OF CE3BI4PT3

Single crystals of Ce3Bi4Pt3 were prepared by the Bridgman method. We report on the differential thermal analysis and measurements of magnet ic and transport properties. The results of magnetic susceptibility, e lectrical resistivity and thermopower are in good agreement with those reported on single crystals prepared by the Bi-flux method. However, the sign of the Hall coefficient at low temperatures is positive, bein g opposite to that previously reported. The positive sign for both the Hall coefficient and thermopower suggests that Ce3Bi4Pt3 is a p-type semiconductor with a hybridization gap of approximately 100 K. (C) 199 8 Elsevier Science S.A.