Total reflection X-ray fluorescence spectrometry (TXRF) is one of the
most common tools to analyze metal contaminants on silicon wafers and
other substrate surfaces. Although the detection limit of commercial T
XRF was improved to the concentration region of 10(9) atoms cm(-2), it
s accuracy at low concentration was not yet clarified until now. In th
is paper, we examine the accuracy of the quantitative analysis by TXRF
under 10(11) atoms cm(-2) for Fe, Ni, Cu and Zn. In particular, four
factors (standard sample, reference analyzing method, compensation of
spurious peak and peak separation) are considered. Under a controlled
condition, the accuracy is within 20% as compared with atomic absorpti
on spectrophotometry (AAS).