ELECTRICAL-TRANSPORT PROPERTIES OF CR-SI AND CR-GA ALLOY SINGLE-CRYSTALS

Measurements are reported of the electrical resistivity of dilute Cr-S i and Cr-Ga alloy single crystals in the temperature range 4 to 1000 K . Analyses of the data show large magnetic contributions to the electr ical resistivity of all of the alloys at temperatures 0 < T < 2T(N), w here T-N is the Neel temperature. These magnetic contributions are par tly attributed to spin-fluctuation and temperature-dependent resonant impurity scattering effects. A hysteretic resistivity anomaly, ascribe d to the effects of mixed incommensurate (I) and commensurate (C) spin -density-wave (SDW) states, was observed near the I-C phase transition temperature of Cr + 1.2 at.% Si. The resistivity of Cr + 0.16 at.% Ga shows a small and unusual anomaly near the spin-flip transition tempe rature.