FAST SUBMICROMETER INTERFERENCE LITHOGRAPHY ON SILICON

Authors
JIANG HB GROSSMANN A HANSCH TW
Citation
Hb. Jiang et al., FAST SUBMICROMETER INTERFERENCE LITHOGRAPHY ON SILICON, Applied physics. B, Lasers and optics, 66(4), 1998, pp. 523-525
Citations number
16
Categorie Soggetti
Physics, Applied",Optics
Journal title
Applied physics. B, Lasers and optics → ACNP
ISSN journal
09462171
Volume
66
Issue
4
Year of publication
1998
Pages
523 - 525
Database
ISI
SICI code
0946-2171(1998)66:4<523:FSILOS>2.0.ZU;2-3
Abstract
We report on a very fast, pulsed-laser interference lithography on sil icon surface. The illumination of a hydrogen-terminated silicon surfac e with two interfering laser beams results locally in laser-induced th ermal desorption of H atoms and Si oxidation in air. Line patterns wit h a periodicity of 380 nm were produced by a single 10-ns laser pulse on Si(111) after removal of the laser-induced Si oxide by wet etching. The halfwidth of the structure is about 160nm.