VOLTAGE TUNABLE PLASMA RESONANCES IN INDUCED-BASE HOT-ELECTRON TRANSISTORS

The excitation of the standing plasma waves in induced-base hot-electr on transistors (IBHETs) and its impact on the IBHET high-frequency ope ration are considered. It is shown that the plasma waves result in res onant behavior of the IBHET performance at high frequencies. The frequ ency dependent small-signal transconductance of the IBHET is calculate d using an analytical model, The resonant frequencies and the sharpnes s of the resonant peaks are found as functions of structural parameter s and bias voltage. The resonant frequencies can correspond to the ter ahertz range. The resonant transconductance can significantly exceed t he steady-state transconductances of the IBHET. (C) 1997 American Inst itute of Physics.