MICRO-ELECTROREFLECTANCE AND PHOTOREFLECTANCE CHARACTERIZATION OF THEBIAS DEPENDENCE OF THE QUANTUM-CONFINED STARK-EFFECT IN A FABRICATED 0.98 MU-M INGAAS GAAS/INGAP LASER/

Using electro- and photoreflectance with a spatial resolution of appro ximate to 10 mu m we have evaluated the energy of the fundamental cond uction to heavy-hole (1C-1 HH) quantum transition of a fabricated 0.98 mu m InGaAs/GaAs/InGaP p-i-n quantum well laser structure as a functi on of bias and position on the laser stripe. From a comparison of the measured forward/reverse bias dependence of the 1C-1HH energy with a t heoretical calculation of the quantum confined Stark effect, we have b een able to evaluate the built-in electric field and width of the insu lating region. (C) 1997 American Institute of Physics.