GAIN SPECTROSCOPY ON INGAN GAN QUANTUM-WELL DIODES/

Authors
KUBALL M JEON ES SONG YK NURMIKKO AV KOZODOY P ABARE A KELLER S COLDREN LA MISHRA UK DENBAARS SP STEIGERWALD DA
Citation
M. Kuball et al., GAIN SPECTROSCOPY ON INGAN GAN QUANTUM-WELL DIODES/, Applied physics letters, 70(19), 1997, pp. 2580-2582
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
19
Year of publication
1997
Pages
2580 - 2582
Database
ISI
SICI code
0003-6951(1997)70:19<2580:GSOIGQ>2.0.ZU;2-4
Abstract
We have investigated spectroscopically the emergence of gain in InGaN/ GaN quantum well diodes under high current injection (>kA/cm(2)). The spectral characteristics suggest that the electronic states responsibl e for blue laser action in this material an strongly influenced by the presence of microscopic crystalline disorder. (C) 1997 American Insti tute of Physics.