ULTRAVIOLET (340-390 NM), ROOM-TEMPERATURE, PHOTOLUMINESCENCE FROM INAS NANOCRYSTALS EMBEDDED IN SIO2 MATRIX

InAs nanocrystals embedded in SiO2 matrix have been fabricated by a ra dio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest t he existence of InAs nanocrystals in the SiO2 matrix. From the optical absorption spectrum, the absorption edge exhibits a very large bluesh ift of 3.3 eV with respect to that of bulk InAs. The double-peak ultra violet photoluminescence is observed. Our experimental results show th at this double-peak phenomenon originates from the radiative recombina tion of the quantum-confined electron-heavy hole excitons and electron -split-off hole excitons. (C) 1997 American Institute of Physics.