CONDUCTING SR0.7NBO3 THIN-FILM ELECTRODES FOR FERROELECTRIC CAPACITORS

Citation
Rm. Bowman et al., CONDUCTING SR0.7NBO3 THIN-FILM ELECTRODES FOR FERROELECTRIC CAPACITORS, Applied physics letters, 70(19), 1997, pp. 2622-2624
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
19
Year of publication
1997
Pages
2622 - 2624
Database
ISI
SICI code
0003-6951(1997)70:19<2622:CSTEFF>2.0.ZU;2-R
Abstract
We report the synthesis of thin films of the conducting cubic oxide Sr 0.7NbO3 by pulsed laser deposition. Deposition conditions were investi gated and optimized to yield both conductivity and crystallinity. Unli ke most similar materials we find that successful synthesis of conduct ing Sr0.7NbO3 is very sensitive to oxygen pressure during deposition. Optimal properties were obtained for vacuum deposition at a substrate temperature of 750 degrees C. Typical resistivity was 800 mu Omega cm at 300 K and independent of temperature down to 10 K. Films grew epita xially onto {100} MgO. Functionality of the material was demonstrated by preparing MgO/Sr0.7NbO3/PBTiO3/Au capacitors. Despite their apparen tly excellent lattice match, these capacitors exhibited depressed Curi e temperatures, (C) 1997 American Institute of Physics.