Ng. Shang et al., INVESTIGATION OF DIAMOND FILMS DEPOSITED ON LAALO3 SINGLE-CRYSTAL SUBSTRATES BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Chinese Physics Letters, 15(2), 1998, pp. 146-148
Diamond nucleation and growth on a LaAlO3 single crystal substrate, wh
ose lattice mismatch with diamond is only 7.2% at high temperature, we
re investigated for the first time. As an insulating substrate, a nucl
eation density of more than 10(8) cm(-2) was achieved on ultrasonicall
y cleaned wafers. A free-standing diamond film was obtained for 65 h g
rowth and characterized by scanning electron microscopy, Raman and x-r
ay photoelectron spectroscopy. The results show that LaAlO3 single cry
stal is a good candidate substrate for diamond film growth.