INVESTIGATION OF DIAMOND FILMS DEPOSITED ON LAALO3 SINGLE-CRYSTAL SUBSTRATES BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

Authors
SHANG NG FANG NC HANG Y LI JQ HAN SJ SHAO QY CUI JB XU CY
Citation
Ng. Shang et al., INVESTIGATION OF DIAMOND FILMS DEPOSITED ON LAALO3 SINGLE-CRYSTAL SUBSTRATES BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Chinese Physics Letters, 15(2), 1998, pp. 146-148
Citations number
8
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
15
Issue
2
Year of publication
1998
Pages
146 - 148
Database
ISI
SICI code
0256-307X(1998)15:2<146:IODFDO>2.0.ZU;2-K
Abstract
Diamond nucleation and growth on a LaAlO3 single crystal substrate, wh ose lattice mismatch with diamond is only 7.2% at high temperature, we re investigated for the first time. As an insulating substrate, a nucl eation density of more than 10(8) cm(-2) was achieved on ultrasonicall y cleaned wafers. A free-standing diamond film was obtained for 65 h g rowth and characterized by scanning electron microscopy, Raman and x-r ay photoelectron spectroscopy. The results show that LaAlO3 single cry stal is a good candidate substrate for diamond film growth.