A LOW-THRESHOLD POLARIZATION-CONTROLLED VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN ON GAAS (311)B SUBSTRATE

Authors
MIZUTANI A HATORI N NISHIYAMA N KOYAMA F IGA K
Citation
A. Mizutani et al., A LOW-THRESHOLD POLARIZATION-CONTROLLED VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN ON GAAS (311)B SUBSTRATE, IEEE photonics technology letters, 10(5), 1998, pp. 633-635
Citations number
14
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
10
Issue
5
Year of publication
1998
Pages
633 - 635
Database
ISI
SICI code
1041-1135(1998)10:5<633:ALPVS>2.0.ZU;2-M
Abstract
We have demonstrated a GaAs (311)B vertical-cavity surface-emitting la ser (VCSEL) with a threshold current as low as 250 mu A, which is the lowest value ever reported for that on non-(100) oriented substrates. Also, the fabricated VCSEL shows a stable polarization state for an wi de during current ranges and a large polarization-mode suppression rat io over 30 dB between the [(2) over bar 33] and [01(1) over bar] axis modes at 5 mA. The electrical specific resistance of 1.2 x 10(-4) Omeg a.cm(-2) at the threshold was reasonably low due to carbon autodoping to AlAs in a p-type distributed Bragg reflector (DBR).